 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) STTH12004TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) Features and benefits 2 x 60 A 400 V 150 C 0.83 V 50 ns K2 A1 A2 K1 K2 K1 A1 A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH12004TV1 Description The STTH12004TV1 uses ST 400V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH12004TV1 Marking STTH12004TV1 Table 3: Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Storage temperature range Maximum operating junction temperature Tc = 115 C = 0.5 Per diode Surge non repetitive forward current tp = 10 ms sinusoidal Parameter Repetitive peak reverse voltage Value 400 120 60 600 -55 to + 150 150 Unit V A A A C C October 2005 REV. 1 1/6 STTH12004TV1 Table 4: Thermal resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 0.5 0.3 0.1 C/W Unit C/W When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static electrical characteristics (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 50 IF = 60 A 0.83 Min. Typ Max. 50 500 1.2 1.0 V Unit A Reverse leakage current Tj = 25 C Tj = 125 C Forward voltage drop Tj = 25 C Tj = 150 C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF (RMS) 2 Table 6: Dynamic characteristics (per diode) Symbol trr Parameter Reverse recovery Tj = 25 C time Test conditions IF = 1 A dIF/dt = 50 A/s VR = 30 V IF = 1 A dIF/dt = 200 A/s VR = 30 V Min Typ Max Unit 66 36 90 50 15 0.4 600 2.6 ns V A ns IRM Sfactor tfr VFP Reverse recovery Tj = 125 C IF = 60 A VR = 200 V current dIF/dt = 100 A/s Softness factor Tj = 125 C IF = 60 A VR = 200 V dIF/dt = 100 A/s IF = 60 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 60 A dIF/dt = 200 A/s VFR = 1.1 x VFmax Forward recovery Tj = 25 C time Forward recovery Tj = 25 C voltage 2/6 STTH12004TV1 Figure 1: Conduction losses versus average forward current (per diode) P (W) 80 d=0.1 d=0.2 d=0.5 d=1 Figure 2: Forward voltage drop versus forward current (per diode) 200 180 160 TJ=150C (Maximum values) I FM (A) 70 60 d=0.05 140 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 T 120 100 80 60 40 20 0 0.0 0.2 0.4 TJ=150C (Typical values) I F(AV) (A) V FM (V) 0.6 0.8 1.0 TJ=25C (Maximum values) 1.2 1.4 1.6 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c)/R th(j-c) 1.0 0.9 0.8 0.7 0.6 Single pulse Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) I RM (A) IF=IF(AV) VR=200V TJ=125C 45 40 35 30 25 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 20 15 10 t P (s) 1.E-01 1.E+00 1.E+01 5 0 0 50 100 150 dIF /dt(A/s) 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) trr (ns) 250 225 200 175 150 125 100 75 50 25 0 0 50 100 150 IF=IF(AV) VR=200V TJ=125C Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) 3000 Qrr (nC) IF=IF(AV) VR=200V TJ=125C 2500 2000 1500 1000 500 dI F /dt(A/s) 200 250 300 350 400 450 500 0 0 100 dIF /dt(A/s) 200 300 400 500 3/6 STTH12004TV1 Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) SFACTOR 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 IF < 2 x IF(AV) VR=200V Tj=125C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 1.4 1.2 1.0 0.8 IRM & tRR SFACTOR 0.6 0.4 0.2 0.0 300 350 400 450 500 25 50 QRR IF=IF(AV) VR=200V Reference: Tj=125C dIF /dt(A/s) 200 250 Tj (C) 75 100 125 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 8 7 6 5 4 3 2 Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1000 900 800 700 600 500 400 300 200 IF=IF(AV) VFR=1.1 x V F max. Tj=125C VFp ( V ) IF=IF(AV) Tj=125C 1 0 0 50 100 150 dI F /dt(A/s) 200 250 300 350 400 450 500 100 0 0 50 100 150 dI F /dt(A/s) 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 100 1 10 VR (V) 100 1000 4/6 STTH12004TV1 Figure 12: ISOTOP Package mechanical data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering information Ordering type STTH12004TV1 Marking STTH12004TV1 Package ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Date 18-Oct-2005 Revision 1 First issue Description of Changes Table 8: Revision history 5/6 STTH12004TV1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
Price & Availability of STTH12004TV1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |